NPN Silicon RF Transistor*

• For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA
• fT = 8 GHz, F = 0.9 dB at 900 MHz
• Two (galvanic) internal isolated Transistors in one package
• For orientation in reel see package information below
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
* Short term description