BFG10W 데이터시트 - Philips Electronics
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BFG10W
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Philips Electronics
DESCRIPTION
NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin dual-emitter SOT343 package.
FEATURES
• High efficiency
• Small size discrete power amplifier
• 900 MHz and 1.9 GHz operating areas
• Gold metallization ensures excellent reliability.
APPLICATIONS
• Common emitter class-AB operation in hand-held radio equipment up to 1.9 GHz.
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