DESCRIPTION
Enhancement type field-effect transistor in a plastic microminiature SOT343R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.
   
FEATURES
• Specially designed for use at 9 to 12 V supply voltage
• Short channel transistor with high forward transfer
    admittance to input capacitance ratio
• Low noise gain controlled amplifier up to 1 GHz
• Superior cross-modulation performance during AGC.
   
APPLICATIONS
• VHF and UHF applications such as television tuners and
    professional communications equipment.