Plastic Medium−Power
Complementary Silicon
Transistors

BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80−100 VOLTS, 65 WATTS

These devices are designed for general−purpose amplifier and low−speed switching applications.

FEATUREs
• High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc
• Collector Emitter Sustaining Voltage − @ 100 mAdc
VCEO(sus) = 80 Vdc (Min) − BDX53B, 54B
VCEO(sus) = 100 Vdc (Min) − BDX53C, 54C
• Low Collector−Emitter Saturation Voltage −
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors
• Pb−Free Packages are Available*