BD776 데이터시트 - ON Semiconductor
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BD776
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ON Semiconductor
Plastic Darlington Complementary Silicon Power Transistors
. . . designed for general purpose amplifier and high–speed switching applications.
• High DC Current Gain hFE= 1400 (Typ) @ IC= 2.0 Adc
• Collector–Emitter Sustaining Voltage — @ 10 mAdc
VCEO(sus)= 45 Vdc (Min) — BD776
VCEO(sus) = 60 Vdc (Min) — BD777, 778
VCEO(sus) = 80 Vdc (Min) — BD780
• Reverse Voltage Protection Diode
• Monolithic Construction with Built–in Base–Emitter output Resistor
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