BD636 데이터시트 - New Jersey Semiconductor
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BD636
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New Jersey Semiconductor
DESCRIPTION
• DC Current Gain -
: hFE = 40(Min.)@lc=-25mA
• Collector-Emitter BreakdownVoltage-
: V(BR)CEo= -60V(Min.)
• Complement to Type BD635
APPLICATIONS
• Designed for amplifier and switching applications.
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