BD235 데이터시트 - ETC1
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BD235
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ETC1
TRANSISTOR (NPN)
FEATURES
Power dissipation PCM: 1.25 W (Tamb=25℃)
Collector current ICM: 2 A
Collector-base voltage V(BR)CBO: BD233 : 45 V BD235: 60 V BD237: 100 V
Operating and storage junction temperature range TJ : 150℃ Tstg: -65℃ to +150℃
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TO-126 Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-126 Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-126 Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
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