FEATURES
♦ For general purpose applications.
♦ This diode features low turn-on voltage.
The devices are protected by a PN
junction guard ring against excessive voltage,
such as electrostatic discharges.
♦ Metal-on-silicon Schottky barrier device which is
protected by a PN junction guard ring. The low
forward voltage drop and fast switching make it ideal
for protection of MOS devices, steering, biasing and
coupling diodes for fast switching and low logic level
applications.
♦ This diode is also available in the Mini-MELF case
with the type designation BAS86.
MECHANICAL DATA
Case: DO-35 Glass Case
Weight: approx. 0.13 g