B783 데이터시트 - Inchange Semiconductor
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B783
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Inchange Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min)
• Good Linearity of hFE
• Fast Switching Speed
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
• Designed for use in general purpose power amplifier and
switching applications
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