B10NK60Z(2012) 데이터시트 - STMicroelectronics
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B10NK60Z
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24 Pages
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STMicroelectronics
Description
These devices are N-channel Zener-protected Power MOSFET developed using STMicroelectronics SuperMESH™ technology, achieved through optimization of STs wellestablished strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
FEATUREs
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Zener-protected
APPLICATIONs
■ Switching applications
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