Description
The ATC18RHA is fabricated on a proprietary 0.18 µm, five-metal-layers CMOS process intended for use with a supply voltage of 1.8V ± 0.15V.

FEATUREs
• Comprehensive Library of Standard Logic and I/O Cells
• ATC18RHA Core pads Designed to Operate with VDD = 1.8V +/- 0.15V as Main Condition
• IO33 Pad Libraries Provide Interfaces to 3.3+/-0.3V and 2.5 +/- 0.25V Environments
• Memory Cells Compiled or synthesized to the Requirements of the Design
• EDAC Library
• Cold Sparing Buffers
• High Speed LVDS Buffers (655Mbps)
• PCI Buffers
• Predefined Die Sizes to Accommodate Standardized Packages and ESA (European Space Agency) Multi-project Wafer Services
• MQFP Package Up to 352 Pins (336 Signal Pins)
• MCGA Packages Up to 625 Pins (575 Signal Pins)
• ESD better than 2000V for IO33 and better than 1000V for PLL
• No single event latch-up below a LET threshold of 80 Mev/mg/cm² at ambient temperature
• SEU hardened flip-flops
• Tested up to a total dose of 300 krads (Si) according to Mil Std 883 Test Method 1019
• Quality Grades: QML-Q and QML-V with 5962-06B02, ESCC 9000