Description
The 64K x 32-bit cell is an embedded 2-Mbit Flash electrically erasable and programmable read only memory with a power supply of 1.8V ±10%. The memory is organized as 1024 pages of 64 32-bit words each. The device uses the Atmel ATC18 0.18 µm silicon process. For easy reprogrammability, it does not require a high input voltage for programming: the embedded Flash can be operated with a single 1.8V ±10% power supply.

FEATUREs
• 64K x 32-bit Flash Embedded Memory Cell
• Fast Read Access Time
   – Random Access Time: 70 ns Worst Case (Process, Voltage, Temperature)
   – Page Access Time: 40 ns Worst Case (Process, Voltage, Temperature)
• Single Supply Voltage: 1.8V ±10%
• Page Program Operation
   – 1024 Pages (64 Words/Page)
   – Internal Data Latches For 64 Words
   – Read Capability During Data Load
• Program Cycle Time: 4 ms per Page Including Auto-erase
• Full Chip Erase Available in 10 ms
• rdybsyn Signal For End of Program Detection
• Very Low Power Dissipation
   – 8 mA Active Current in Write and Erase
   – 4 mA Active Current in Random Read
   – 30 µA Stand-by Current
• High Reliability CMOS Technology
   – Typical Endurance: 100K Write/Word
   – Data Retention: 10 Years
• Erased State (Charged Gate) Is a Logic “1”