Description
The AT52BR1672(T) combines a 16-megabit Flash (1M x 16) and a 2-megabit SRAM (organized as 128K x 16) in a stacked CBGA package; while the AT52BR1674(T) combines a 16- megabit Flash (1M x 16) and a 4-megabit SRAM (organized as 256K x 16) in a stacked CBGA package. Both devices operate at 2.7V to 3.3V in the industrial temperature range. The modules use a 16-megabit Flash with dual plane architecture for concurrent read/write operations. The Flash is organized as 12M + 4M for planes B and A, respectively.

FEATUREs
• 16-Mbit Flash and 2-Mbit/4-Mbit SRAM
• Single 66-ball 8 mm x 10 mm x 1.2 mm CBGA Package
• 2.7V to 3.3V Operating Voltage

Flash
• 2.7V to 3.3V Read/Write
• Access Time – 85 ns
• Sector Erase Architecture
    – Thirty-one 32K Word (64K Byte) Sectors with Individual Write Lockout
    – Eight 4K Word (8K Byte) Sectors with Individual Write Lockout
• Fast Word Program Time – 20 µs
• Fast Sector Erase Time – 300 ms
• Dual-plane Organization, Permitting Concurrent Read While Program/Erase
    – Memory Plane A: Eight 4K Word and Seven 32K Word Sectors
    – Memory Plane B: Twenty-four 32K Word Sectors
• Erase Suspend Capability
    – Supports Reading and Programming from Any Sector by Suspending Erase of a Different Sector
    – Supports Reading Any Word by Suspending Programming of Any Other Word
• Low-power Operation
    – 30 mA Active
    – 10 µA Standby
• Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
• VPP Pin for Accelerated Program/Erase Operations
• RESET Input for Device Initialization
• Sector Lockdown Support
• Top/Bottom Block Configuration
• 128-bit Protection Register

SRAM
• 2-megabit (128K x 16)/4-megabit (256K x 16)
• 2.7V to 3.3V VCC Operating Voltage
• 70 ns Access Time
• Fully Static Operation and Tri-state Output
• 1.2V (Min) Data Retention
• Industrial Temperature Range