datasheetbank_Logo
전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크
HOME  >>>  Atmel Corporation  >>> AT49BV040T PDF

AT49BV040T 데이터시트 - Atmel Corporation

AT49BV040T image

부품명
AT49BV040T

Other PDF
  no available.

PDF
DOWNLOAD     

page
12 Pages

File Size
170 kB

제조사
Atmel
Atmel Corporation Atmel

Description
The AT49BV/LV040 are 3-volt-only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS tech nology, the devices offer access times to 120 ns with power dissipation of just 90 mW over the commercial temperature range. When the device is deselected, the CMOS standby current is less than 50 µA.
The device contains a user-enabled “boot block” protection feature. Two versions of the feature are available: the AT49BV/LV040 locates the boot block at lowest order addresses (“bottom boot”); the AT49BV/LV040T locates it at highest order addresses (“top boot”).
To allow for simple in-system reprogrammability, the AT49BV/LV040 does not require high input voltages for programming. Three-volt-only commands determine the read and programming operation of the device. Reading data out of the device is similar to reading from an EPROM. Reprogramming the AT49BV/LV040 is performed by erasing the entire 4 megabits of memory and then programming on a byte-by-byte basis. The typical byte programming time is a fast 30 µs. The end of a program cycle can be optionally detected by the DATA polling feature. Once the end of a byte program cycle has been detected, a new access for a read or program can begin. The typical number of program and erase cycles is in excess of 10,000 cycles.
The optional 16K bytes boot block section includes a reprogramming write lock out feature to provide data integrity. The boot sector is designed to contain user secure code, and when the feature is enabled, the boot sector is permanently protected from being reprogrammed.


FEATUREs
• Single Voltage for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV)
• Fast Read Access Time - 120 ns
• Internal Program Control and Timer
• 16K bytes Boot Block With Lockout
• Fast Chip Erase Cycle Time - 10 seconds
• Byte-by-Byte Programming - 30 µs/Byte Typical
• Hardware Data Protection
• DATA Polling For End Of Program Detection
• Low Power Dissipation
   – 25 mA Active Current
   – 50 µA CMOS Standby Current
• Typical 10,000 Write Cycles
• Small Packaging
   – 8 x 8 mm CBGA
   – 8 x 14 mm V-TSOP

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

부품명
상세내역
PDF
제조사
4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory ( Rev : 2008 )
Atmel Corporation
4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory
Atmel Corporation
4-megabit (512K x 8) Single 2.7-volt Battery-Voltage™ Flash Memory
Atmel Corporation
4 Megabit (512K x 8) Single 2.7-volt Battery-Voltage CMOS Flash Memory ( Rev : V2 )
Atmel Corporation
4 Megabit (512K x 8) Single 2.7-volt Battery-Voltage CMOS Flash Memory
Atmel Corporation
4-megabit (512K x 8) Single 2.7-volt Battery-Voltage™ Flash Memory
Atmel Corporation
4-megabit (512K x 8) Single 2.7-volt Battery-Voltage™ Flash Memory
Atmel Corporation
4-megabit (512K x 8/256K x 16) Single 2.7-volt Battery-Voltage™ Flash Memory ( Rev : 2004 )
Atmel Corporation
8-Megabit (1M x 8) Single 2.7-volt Battery-Voltage Flash Memory
Atmel Corporation
2-megabit (256K x 8) Single 2.7-volt Battery-Voltage Flash Memory ( Rev : 2008 )
Atmel Corporation

Share Link: GO URL

EnglishEnglish Chinese简体中文 Japanese日本語 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]