Description
The AT29BV010A is a 2.7-volt-only in-system Flash Programmable and Erasable Read Only Memory (Flash). Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technol ogy, the device offers access times up to 200 ns, and a low 54 mW power dissipation. When the device is deselected, the CMOS standby current is less than 20 µA. The device endurance is such that any sector can typically be written to in excess of 10,000 times. The programming algorithm is compatible with other devices in Atmel’s Low Voltage Flash family of products.

FEATUREs
• Single Supply Voltage, Range 2.7V to 3.6V
• Single Supply for Read and Write
• Software Protected Programming
• Fast Read Access Time - 200 ns
• Low Power Dissipation
   15 mA Active Current
   20 µA CMOS Standby Current
• Sector Program Operation
   Single Cycle Reprogram (Erase and Program)
   1024 Sectors (128 bytes/sector)
   Internal Address and Data Latches for 128-Bytes
• Two 8 KB Boot Blocks with Lockout
• Fast Sector Program Cycle Time - 20 ms Max.
• Internal Program Control and Timer
• DATA Polling for End of Program Detection
• Typical Endurance > 10,000 Cycles
• CMOS and TTL Compatible Inputs and Outputs
• Commercial and Industrial Temperature Ranges