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AS6VA5128 데이터시트 - ETC

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AS6VA5128

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9 Pages

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98.1 kB

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ETC
ETC ETC

[Alliance]

Functional description
The AS6VA5128 is a low-power CMOS 4,194,304-bit Static Random Access Memory (SRAM) device organized as 524,288 words × 8 bits. It is designed for memory applications where slow data access, low power, and simple interfacing are desired.


FEATUREs
• AS6VA5128
• Intelliwatt™ active power circuitry
• Industrial and commercial temperature ranges available
• Organization: 524,288 words × 8 bits
• 2.7V to 3.3V at 55 ns
• Low power consumption: ACTIVE
    - 132 mW at 3.3V and 55 ns
• Low power consumption: STANDBY
    - 66 µW max at 3.3V
• 1.2V data retention
• Equal access and cycle times
• Easy memory expansion with CS, OE inputs
• Smallest footprint packages
    - 36(48)-ball FBGA
    - 32-pin TSOP I and TSOP II packages are available on Alliance AS6UB5128 product family (available January 2001)
• ESD protection ≥ 2000 volts
• Latch-up current ≥ 200 mA

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제조사
2.7V to 3.3V 512K × 8 Intelliwatt™ low-power CMOS SRAM
Alliance Semiconductor
3.3V 512K × 8 CMOS SRAM
Alliance Semiconductor
5V/3.3V 512K × 8 CMOS SRAM
Alliance Semiconductor
5V/3.3V 512K × 8 CMOS SRAM
Alliance Semiconductor
2.3V to 3.6V 512K×8 Intelliwatt low-power CMOS SRAM
Alliance Semiconductor
2.3V to 3.6V 512K×8 Intelliwatt low-power CMOS SRAM
Semicoa Semiconductor
2.3V to 3.6V 512K×8 Intelliwatt low-power CMOS SRAM ( Rev : 2000 )
Alliance Semiconductor
512K X 8 BIT LOW POWER CMOS SRAM
Alliance Semiconductor
512K X 8 BIT LOW POWER CMOS SRAM ( Rev : 2016 )
Lyontek Inc.
512K X 8 BIT LOW POWER CMOS SRAM
Utron Technology Inc

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