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AS6C3216A-55BIN 데이터시트 - Alliance Semiconductor

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AS6C3216A-55BIN

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11 Pages

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599.2 kB

제조사
ALSC
Alliance Semiconductor ALSC

GENERAL DESCRIPTION
The AS6C3216A-55BIN is a 33,554,432-bit low power CMOS static random access memory organized as 2,097,152 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature.


FEATURE
■ Fast access time : 55ns
■ Low power consumption:
    Operating current : 12mA (TYP.)
    Standby current : 8µA (TYP.)
■ Single 2.7V ~ 3.6V power supply
■ All inputs and outputs TTL compatible
■ Fully static operation
■ Tri-state output
■ Data byte control : LB# (DQ0 ~ DQ7)
                                 UB# (DQ8 ~ DQ15)
■ Data retention voltage : 1.2V (MIN.)
■ ROHS Compliant
■ Package : 48-ball 8mm x 10mm TFBGA

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제조사
2048K X 8 BIT LOW POWER CMOS SRAM
Lyontek Inc.
2048K X 8 BIT LOW POWER CMOS SRAM ( Rev : 2011 )
Lyontek Inc.
2048K X 8 BIT LOW POWER CMOS SRAM ( Rev : 2016 )
Lyontek Inc.
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K X 16bit
ON Semiconductor
2048k Nonvolatile SRAM
Maxim Integrated
2048k Nonvolatile SRAM ( Rev : 2010 )
Maxim Integrated
2048k Nonvolatile SRAM
Maxim Integrated
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit
NanoAmp Solutions, Inc.
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit
ON Semiconductor
2048k Nonvolatile SRAM
Dallas Semiconductor -> Maxim Integrated

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