Functional description
The AS29LV800 is an 8 megabit, 3.0 volt Flash memory organized as 1 Megabyte of 8 bits/512Kbytes of 16 bits each. For flexible erase and program capability, the 8 megabits of data is divided into nineteen sectors: one 16K, two 8K, one 32K, and fifteen 64k byte sectors; or one 8K, two 4K, one 16K, and fifteen 32K word sectors. The ×8 data appears on DQ0–DQ7; the ×16 data appears on DQ0–DQ15. The AS29LV800 is offered in JEDEC standard 48-pin TSOP and 44-pin SOP packages. This device is designed to be programmed and erased in-system with a single 3.0V VCC supply. The device can also be reprogrammed in standard EPROM programmers.

FEATUREs
• Organization: 1M×8/512K×16
• Sector architecture
   - One 16K; two 8K; one 32K; and fifteen 64K byte sectors
   - One 8K; two 4K; one 16K; and fifteen 32K word sectors
   - Boot code sector architecture—T (top) or B (bottom)
   - Erase any combination of sectors or full chip
• Single 2.7-3.6V power supply for read/write operations
• Sector protection
• High speed 70/80/90/120 ns address access time
• Automated on-chip programming algorithm
   - Automatically programs/verifies data at specified address
• Automated on-chip erase algorithm
   - Automatically preprograms/erases chip or specified sectors
• Hardware RESET pin
   - Resets internal state machine to read mode
• Low power consumption
   - 200 nA typical automatic sleep mode current
   - 200 nA typical standby current
   - 10 mA typical read current
• JEDEC standard software, packages and pinouts
   - 48-pin TSOP
   - 44-pin SO; availability TBD
• Detection of program/erase cycle completion
   - DQ7 DATA polling
   - DQ6 toggle bit
   - DQ2 toggle bit
   - RY/BY output
• Erase suspend/resume
   - Supports reading data from or programming data to a sector not being erased
• Low VCC write lock-out below 1.5V
• 10 year data retention at 150C
• 100,000 write/erase cycle endurance