Functional description
The AS29LV400 is an 4 megabit, 3.0 volt Flash memory organized as 512Kbyte of 8 bits/256Kbytes of 16 bits each. For flexible Erase and Program capability, the 4 megabits of data is divided into eleven sectors: one 16K, two 8K, one 32K, and seven 64k byte sectors; or one 8K, two 4K, one 16K, and seven 32K word sectors. The ×8 data appears on DQ0–DQ7; the ×16 data appears on DQ0–DQ15. The AS29LV400 is offered in JEDEC standard 48-pin TSOP. A 44-pin SOP package may be offered in the future. This device is designed to be programmed and erased with a single 3.0V VCC supply. The device can also be reprogrammed in standard EPROM programmers.

FEATUREs
• Organization: 512Kx8/256Kx16
• Sector architecture
    - One 16K; two 8K; one 32K; and seven 64K byte sectors
    - One 8K; two 4K; one 16K; and seven 32K word sectors
    - Boot code sector architecture—T (top) or B (bottom)
    - Erase any combination of sectors or full chip
• Single 2.7-3.6V power supply for read/write operations
• Sector protection
• High speed 70/80/90/120 ns address access time
• Automated on-chip programming algorithm
    - Automatically programs/verifies data at specified address
• Automated on-chip erase algorithm
    - Automatically preprograms/erases chip or specified sectors
• Hardware RESET pin
    - Resets internal state machine to read mode
• Low power consumption
    - 200 nA typical automatic sleep mode current
    - 200 nA typical standby current
    - 10 mA typical read current
• JEDEC standard software, packages and pinouts
    - 48-pin TSOP
    - 44-pin SO; availabillity TBD
• Detection of program/erase cycle completion
    - DQ7 DATA polling
    - DQ6 toggle bit
    - DQ2 toggle bit
    - RY/BY output
• Erase suspend/resume
    - Supports reading data from or programming data to a sector not being erased
• Low VCC write lock-out below 1.5V
• 10 year data retention at 150C
• 100,000 write/erase cycle endurance