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AS29LV016J 데이터시트 - Austin Semiconductor

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AS29LV016J

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40 Pages

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AUSTIN
Austin Semiconductor AUSTIN

GENERAL DESCRIPTION
The AS29LV016J is a 16 Mbit, 3.0 Volt-only Flash memory organized as 2,097,152 bytes or 1,048,576 words. The device is offered in a 48-pin TSOP package. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This device is designed to be programmed in system with the standard system 3.0 volt VCC supply. A 12.0 V VPP or 5.0 VCC are not required for write or erase operations. The device can also be programmed in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
Single Power Supply Operation
   – Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications

Manufactured on 110 nm Process Technology
• Fully compatible with 200 nm AS29LV016

Secured Silicon Sector region
• 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number accessible through a command sequence
• May be programmed and locked at the factory or by the customer

Flexible Sector Architecture
• One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and thirty-one 64 Kbyte sectors (byte mode)
• One 8 Kword, two 4 Kword, one 16 Kword, and thirty-one 32 Kword sectors (word mode)

Sector Group Protection Features
• A hardware method of locking a sector to prevent any program or erase operations within that sector
• Sectors can be locked in-system or via programming equipment
• Temporary Sector Unprotect feature allows code changes in previously locked sectors

Unlock Bypass Program Command
• Reduces overall programming time when issuing multiple program command sequences

Top or Bottom Boot Block Configurations Available Compatibility with JEDEC standards
• Pinout and software compatible with single-power supply Flash
• Superior inadvertent write protection

PACKAGE OPTIONS
• 48-pin TSOP


PERFORMANCE CHARACTERISTICS
High Performance
• Access times as fast as 55 ns
• Extended temperature range (–40°C to +125°C)
  Military temperature range (–55°C to +125°C)

Ultra Low Power Consumption (typical values at 5 MHz)
• 0.2 µA Automatic Sleep mode current
• 0.2 µA standby mode current
• 7 mA read current
• 20 mA program/erase current
Cycling Endurance: 1,000,000 cycles per sector typical
Data Retention: 20 years typical

SOFTWARE FEATURES
CFI (Common Flash Interface) Compliant
• Provides device-specific information to the system, allowing host software to easily reconfigure for different Flash devices

Erase Suspend/Erase Resume
• Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation

Data# Polling and Toggle Bits
Provides a software method of detecting program or erase operation completion

HARDWARE FEATURES
Ready/Busy# Pin (RY/BY#)
• Provides a hardware method of detecting program or erase cycle completion
Hardware Reset Pin (RESET#)
• Hardware method to reset the device to reading array data WP# input pin
• For boot sector devices: at VIL, protects first or last 16 Kbyte sector depending on boot configuration (top boot or bottom boot)

 

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제조사
16 Megabit (2M x 8-Bit / 1M x 16-Bit) CMOS 3.0 Volt-Only Boot Sector Flash Memory
Austin Semiconductor
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2M X 8 Bit / 1M X 16 Bit CMOS 3.3 Volt-only, Boot Sector Flash Memory
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1M X 8 Bit / 512K X 16 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory
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1M X 8 Bit / 512K X 16 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory
AMIC Technology
1M X 8 Bit / 512K X 16 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory
AMIC Technology

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