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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크
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AQV414E 데이터시트 - Matsushita Electric Works

AQV410EH image

부품명
AQV414E

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3 Pages

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50.3 kB

제조사
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Matsushita Electric Works Nais

FEATURES
1. Low on resistance for normally closed type
This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method.

2. Controls low-level analog signals
PhotoMOS relays feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distortion.
3. High sensitivity, low ON resistance
Can control a maximum 0.13 A load current with a 5 mA input current. Low ON resistance of 18 Ω (AQV410EH). Stable operation because there are no metallic contact parts.

4. Low-level off state leakage current
The SSR has an off state leakage current of several milliamperes, whereas the PhooMOS relay has only 100 pA even with he rated load voltage of 400 V AQV414E).

5. Reinforced insulation 5,000 V type also available.
More than 0.4 mm internal insulation disance between inputs and outputs. Conorms to EN41003, EN60950 (reinforced nsulation).

TYPICAL APPLICATIONS
• Security equipment
• Telepone equipment (Dial pulse)
• Measuring equipment




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부품명
상세내역
PDF
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1 Form B
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