N-Channel Enhancement Mode MOSFET
FEATUREs
• 20V/6A , RDS(ON)=28mΩ(typ.) @ VGS=4.5V
RDS(ON)=38mΩ(typ.) @ VGS=2.5V
• Super High Dense Cell Design for Extremely Low RDS(ON)
• Reliable and Rugged
• SO-8 and TSSOP-8 Packages
Applications
• Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems.