AO8830L(V2) 데이터시트 - Alpha and Omega Semiconductor
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AO8830L
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Alpha and Omega Semiconductor
General Description
The AO8830/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. AO8830 and AO8830L are electrically identical.
-RoHs Compliant
-AO8830L is Halogen Free
FEATUREs
VDS (V) = 20V
ID = 6 A (VGS = 10V)
RDS(ON) < 27mΩ (VGS = 10V)
RDS(ON) < 30mΩ (VGS = 4.5V)
RDS(ON) < 37mΩ (VGS = 3.1V)
RDS(ON) < 41mΩ (VGS = 2.5V)
RDS(ON) < 55mΩ (VGS = 1.8V)
ESD PROTECTED!
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Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
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Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor ( Rev : 2003 )
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
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