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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크
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AO4912 데이터시트 - Alpha and Omega Semiconductor

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AO4912

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AOSMD
Alpha and Omega Semiconductor AOSMD

General Description
The AO4912 uses advanced trench technology to provide excellent RDS(ON)and low gate charge. The two
MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC
converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further
Standard Product AO4912 is Pb-free (meets ROHS & Sony 259 specifications). AO4912L is a Green Product ordering option. AO4912 and AO4912L are electrically identical.


FEATUREs
Q1                                Q2
VDS(V) = 30V               VDS(V) = 30V
ID= 8.5A                      ID=7A (VGS= 10V)
RDS(ON)                     < 17mΩ<26mΩ(VGS= 10V)
RDS(ON)                      < 25mΩ<31mΩ(VGS= 4.5V)

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Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor

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