General Description
AO4629 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.

Product Summary
N-Channel                     P-Channel
VDS = 30V                    -30V
ID = 6A (VGS =10V)        -5.5A (VGS =-10V)
RDS(ON)                       RDS(ON)
< 30mΩ(VGS=10V)          < 41mΩ(VGS =-10V)
< 42mΩ(VGS=4.5V)         < 74mΩ(VGS =-4.5V)
100% UIS Tested            100% UIS Tested
100% Rg Tested             100% Rg Tested