General Description
The AO4618 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.

Product Summary
N-Channel                P-Channel
VDS= 40V                -40V
ID= 8A (VGS=10V)     -7A (VGS=-10V)
RDS(ON)                  RDS(ON)
< 19mΩ(VGS=10V)    < 23mΩ(VGS=-10V)
< 27mΩ(VGS=4.5V)    < 30mΩ(VGS=-4.5V)
100% UIS Tested        100% UIS Tested
100% Rg Tested         100% Rg Tested