P-Channel Enhancement Mode Field Effect Transistor

General Description
The AO4435 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4435 is Pb-free (meets ROHS & Sony 259 specifications).
   
Features
    VDS = -30V
    ID = -10A (VGS = -10V)
    RDS(ON) < 18mΩ (VGS = -10V)
    RDS(ON) < 36mΩ (VGS = -5V)