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AM29LV400BB-80DTC1 데이터시트 - Advanced Micro Devices

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AM29LV400BB-80DTC1

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제조사
AMD
Advanced Micro Devices AMD

GENERAL DESCRIPTION
The Am29LV400B in Known Good Die (KGD) form is an 4 Mbit, 3.0 volt-only Flash memory. AMD defines KGD as standard product in die form, tested for function ality and speed. AMD KGD products have the same reliability and quality as AMD products in packaged form.

DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
   — 2.7 to 3.6 V for read, program, and erase operations
   — Ideal for battery-powered applications
■ Manufactured on 0.32 µm process technology
■ High performance
   — 60R, 70, 80, 90, or 120 ns access time
■ Low power consumption (typical values at 5 MHz)
   — 200 nA Automatic Sleep mode current
   — 200 nA standby mode current
   — 7 mA read current
   — 15 mA program/erase current
■ Flexible sector architecture
   — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and seven 64 Kbyte sectors (byte mode)
   — One 8 Kword, two 4 Kword, one 16 Kword, and seven 32 Kword sectors (word mode)
   — Supports full chip erase
   — Sector Protection features:
      A hardware method of locking a sector to prevent any program or erase operations within that sector
      Sectors can be locked in-system or via programming equipment
      Temporary Sector Unprotect feature allows code changes in previously locked sectors
■ Unlock Bypass Program Command
   — Reduces overall programming time when issuing multiple program command sequences
■ Top or bottom boot block configurations available
■ Embedded Algorithms
   — Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors
   — Embedded Program algorithm automatically writes and verifies data at specified addresses
■ Minimum 1,000,000 write cycle guarantee per sector
■ Compatibility with JEDEC standards
   — Pinout and software compatible with single power supply Flash
   — Superior inadvertent write protection
■ Data# Polling and toggle bits
   — Provides a software method of detecting program or erase operation completion
■ Ready/Busy# pin (RY/BY#)
   — Provides a hardware method of detecting program or erase cycle completion
■ Erase Suspend/Erase Resume
   — Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation
■ Hardware reset pin (RESET#)
   — Hardware method to reset the device to reading array data
■ 20-year data retention at 125°C
■ Tested to datasheet specifications at temperature
■ Quality and reliability levels equivalent to standard packaged components

 

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제조사
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Advanced Micro Devices
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Advanced Micro Devices
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Advanced Micro Devices
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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