GENERAL DESCRIPTION
ALD114813/ALD114913 are monolithic quad/dual N-Channel MOSFETS matched at the factory using ALD’s proven EPAD CMOS technology. These devices are intended for low voltage, small signal applications. They are excellent functional replacements for normally-closed relay applications, as they are normally on (conducting) without any power applied, but could be turned off or modulated when system power supply is turned on. These MOSFETS have the unique characteristics of, when the gate is grounded, operating in the resistance mode for low drain voltage levels and in the current source mode for higher voltage levels and providing a constant drain current.

FEATURES
• Depletion mode (normally ON) without power
• Precision Gate Threshold Voltages: -1.30V +/- 0.04V
• Nominal RDS(ON) @VGS=0.0V of 1.3KΩ
• Matched MOSFET to MOSFET characteristics
• Tight lot to lot parametric control
• Low input capacitance
• VGS(th) match (VOS) — 20mV
• High input impedance — 1012Ω typical
• Positive, zero, and negative VGS(th) temperature coefficient
• DC current gain >108
• Low input and output leakage currents

APPLICATIONS
• Functional replacement of Form B (NC) relay
• Zero power fail safe circuits
• Backup battery circuits
• Power failure detector
• Fail safe signal detector
• Source followers and buffers
• Precision current mirrors
• Precision current sources
• Capacitives probes
• Sensor interfaces
• Charge detectors
• Charge integrators
• Differential amplifier input stage
• High side switches
• Peak detectors
• Sample and Hold
• Alarm systems
• Current multipliers
• Analog switches
• Analog multiplexers
• Voltage comparators
• Level shifters