GENERAL DESCRIPTION
ALD1108E/ALD1110E are monolithic quad/dual EPAD® (Electrically Programmable Analog Device) N-channel MOSFETs with electrically adjustable threshold (turn-on) voltage. The ALD1108E/ALD1110E are matched and adjusted (e-trimmed) at the factory resulting in quad/dual MOSFETs that are highly matched in threshold voltages and other electrical characteristics. For a given input voltage, the threshold voltage of a MOSFET device determines its drain on-current, resulting in an on resistance characteristic that can be precisely preset and then controlled by the input voltage very accurately.

FEATURES
• Electrically Programmable Analog Device
• Proven, non-volatile CMOS technology
• Operates from 2V, 3V, 5V to 10V
• Flexible basic circuit building block and design element
• Very high resolution -- average e-trim voltage resolution of 0.1mV
• Wide dynamic range -- current levels from 0.1µA to 3000µA
• Voltage adjustment range from 1.000V to 3.000V in 0.1mV steps
• Typical 10-year drift of less than 2mV
• Usable in voltage mode or current mode
• High input impedance -- 1012Ω
• Very high DC current gain -- greater than 109
• Device operating current has positive temperature
   coefficient range and negative temperature
   coefficient range with cross-over zero temperature
   coefficient current level at 68µA
• Tight matching and tracking of on-resistance between different devices with e-trim
• Very low input currents and leakage currents
• Low cost, monolithic technology
• Application-specific or in-system programming modes
• Opptional user software-controlled automation
• Opptional e-trim of any standard/custom configuration
• Micropower operation
• Available in standard PDIP, SOIC and hermetic CDIP packages
• Suitable for matched-pair balanced circuit configuration
• Suitable for both coarse and fine trimming, as well as matched MOSFET array applications
• RoHS compliant