Introduction
The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—1990 MHz), time-division multiple access (TDMA), and single-carrier or multicarrier class AB power amplifier applications.

FEATUREs
   Typical 2 carrier, N-CDMA performance for
   VDD = 28 V, IDQ = 1250 mA, F1 = 1958.75 MHz,
   F2 = 1961.25 MHz, IS-95 (pilot, paging, sync,
   traffic channels 8—13) 1.2288 MHz channel
   bandwidth (BW). Adjacent channels measured
   over a 30 kHz BW at F1 – 0.885 MHz and
   F2 + 0.885 MHz. Intermodulation distortion
   products measured over a 1.2288 MHz BW at
   F1 – 2.5 MHz and F2 + 2.5 MHz. Peak/Average
   (P/A) = 9.72 dB at 0.01% probability on CCDF:
   — Output power: 24 W.
   — Power gain: 15 dB.
   — Efficiency: 24%.
   — ACPR: –48 dBc.
   — IMD3: –34 dBc.
   — Return loss: –10 dB.
   High-reliability, gold-metalization process.
   Low hot carrier injection (HCI) induced bias drift
      over 20 years.
   Internally matched.
   High gain, efficiency, and linearity.
   Integrated ESD protection.
   Device can withstand a 10:1 voltage standing wave
      ratio (VSWR) at 28 Vdc, 1960 MHz, 125 W continuous wave (CW) output power.
   Large signal impedance parameters available.