A1430 데이터시트 - Toshiba
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A1430
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Strobe Flash Applications
Medium Power Amplifier Applications
• High DC current gain and excellent hFElinearity
: hFE (1)= 140 to 600 (VCE= −1 V, IC= −0.5 A)
: hFE (2)= 60 (min), 120 (typ.) (VCE= −1 V, IC= −4 A)
• Low saturation voltage: VCE (sat)= −0.5 V (max)
(IC= −2 A, IB= −50 mA)
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
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