8H01 데이터시트 - Toshiba
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8H01
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Toshiba
HIGH-SPEED SWITCHING APPLICATIONS
LORD SWITCHING APPLICATIONS
STROBE FLASH APPLICATIONS
• Multi-chip discrete device; built-in NPN transistor for main switch and N-ch MOS FET for drive
• High DC current gain: hFE = 250 to 400 (IC = 0.5 A) (NPN transistor)
• Low collector-emitter saturation voltage: VCE (sat) = 0.13 V (max)
(NPN transistor)
• High-speed switching: tf = 25 ns (typ.) (NPN transistor)
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TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type ( Rev : 2013 )
Toshiba
TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type
Toshiba
TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor, Field Effect Transistor Silicon N Cannel MOS Type
Toshiba
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