DESCRIPTION
The AM81719-040 is a high power silicon NPN bipolar transistor designed for Class C, CW communications and telemetry applications in the 1.75 - 1.85 GHz frequency range.
An emitter-ballasted refractory-gold overlay die geometry with computerized automatic wire-bonding is employed to ensure long-term reliability and product consistency.

■ REFRACTORY/GOLD METALLIZATION
■ EMITTER SITE BALLASTED
■ INPUT/OUTPUT MATCHING
■ OVERLAY GEOMETRY
■ METAL/CERAMIC HERMETIC PACKAGE
■ POUT = 40 W MIN. WITH 7 dB GAIN