Description
The M65609E is a very low power CMOS static RAM organized as 131,072 x 8 bits.
Utilizing an array of six transistors (6T) memory cells, the M65609E combines an extremely low standby supply current with a fast access time at 40 ns. The high stability of the 6T cell provides excellent protection against soft errors due to noise.

FEATUREs
• Operating Voltage: 3.3V
• Access Time: 40 ns
• Very Low Power Consumption
   – Active: 160 mW (Max)
   – Standby: 70 µW (Typ)
• Wide Temperature Range: -55⋅°C to +125⋅°C
• MFP 32 leads 400 Mils Width Package
• TTL Compatible Inputs and Outputs
• Asynchronous
• Designed on 0.35µm Process
• No Single Event Latch-up below a LET threshold of 80 MeV/mg/cm2@125 °C
• Radiation Tolerance(1)
   – Tested up to a Total Dose of 300 krad (Si)
   – RHA capability of 100 krad (Si) according to MIL STD 883 Method 1019
• Quality grades: QML Q or V with SMD 5962-02501