3SK253 데이터시트 - NEC => Renesas Technology
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3SK253
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NEC => Renesas Technology
FEATURES
• Low VDD Use : (VDS = 3.5 V)
• Driving Battery
• Low Noise Figure : NF = 1.8 dB TYP. (f = 900 MHz)
• High Power Gain : GPS = 18.0 dB TYP. (f = 900 MHz)
• Suitable for use as RF amplifier in UHF TV tuner.
• Automatically Mounting : Embossed Type Taping
• Package : 4 Pins Mini Mold
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제조사
RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD
NEC => Renesas Technology
RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD ( Rev : 2001 )
NEC => Renesas Technology
RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD
NEC => Renesas Technology
RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD
NEC => Renesas Technology
RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD
NEC => Renesas Technology
RF AMP. AND MIXER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD
NEC => Renesas Technology
RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD
NEC => Renesas Technology
RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIELD-EFFECT TRANSISTOR 4 PIN MINI MOLD
NEC => Renesas Technology
RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD
NEC => Renesas Technology
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