제조사
STMicroelectronics
Description
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
FEATUREs
• Worldwide best RDS(on) * area
• Higher VDSS rating and high dv/dt capability
• Excellent switching performance
• 100% avalanche tested
APPLICATIONs
• Switching applications
N-channel 650 V, 0.160 Ω typ., 18 A MDmesh™ V Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages
STMicroelectronics
N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power MOSFETs in D2PAK, I2PAK, TO-220 and TO-247 packages
STMicroelectronics
N-channel 650 V, 0.124 Ω, 22 A, MDmesh M5 Power MOSFETs in D2PAK, TO‑220FP, TO‑220 and TO-247 packages ( Rev : 2019 )
STMicroelectronics
N-channel 600 V, 0.108 Ω typ., 26 A, MDmesh M2 Power MOSFETs in TO‑220FP, I2PAK, TO-220 and TO-247 packages
STMicroelectronics
N-channel 600 V, 0.078 Ω typ., 34 A MDmesh M2 Power MOSFETs in D2PAK, TO-220 and TO-247 packages
STMicroelectronics
N-channel 650 V, 0.124 Ω typ., 22 A MDmesh™ V Power MOSFET in D2PAK, TO-220FP, I2PakFP, TO-220 and TO-247 packages
STMicroelectronics
N-channel 650 V, 0.073 Ω, 30 A MDmesh™ V Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packages
STMicroelectronics
N-channel 600 V, 0.65 Ω typ., 10 A SuperMESH™ Power MOSFET in I2PAK, D2PAK, TO-220, TO-220FP, TO-247 packages ( Rev : 2012 )
STMicroelectronics
N-channel 650 V, 0.056 Ω typ., 42 A MDmesh™ V Power MOSFETs in TO-247 and TO-247 long leads packages
STMicroelectronics
N-channel 650 V, 0.070 Ω, 33 A MDmesh™ V Power MOSFET in I2PAK, TO-220, TO-220FP, D2PAK and TO-247
STMicroelectronics