General Description
Mimix Broadbands three stage 27.0-32.0 GHz GaAs MMIC power amplifier has a small signal gain of 22.0 dB with +33 dBm saturated output power. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-toPoint Radio, LMDS, SATCOM and VSAT applications.

FEATUREs
◆ Ka-Band 2W Power Amplifier
◆ 22.0 dB Small Signal Gain
◆ +33.0 dBm Saturated Output Power
◆ +40.0 dBm Output Third Order Intercept (OIP3)
◆ 100% On-Wafer RF, DC and Output Power Testing
◆ 100% Visual Inspection to MIL-STD-883 Method 2010