2SK3799(2006) 데이터시트 - Toshiba
부품명
2SK3799
Other PDF
PDF
page
6 Pages
File Size
208.3 kB
제조사
Toshiba
Switching Regulator Applications
• Low drain-source ON resistance : RDS (ON) = 1.0 Ω (typ.)
• High forward transfer admittance : |Yfs| = 6.0 S (typ.)
• Low leakage current : IDSS = 100μ A (max) (VDS = 720 V)
• Enhancement model : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
부품명
상세내역
PDF
제조사
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV) ( Rev : 2013 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOSIV) ( Rev : 2005 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOSIV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOSIV) ( Rev : 2009 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) ( Rev : 2011 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) ( Rev : 2006 )
Toshiba
Share Link: