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Renesas Electronics
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DESCRIPTION
The 2SK3408 is a switching device which can be driven directly by a 4.0 V power source.
The 2SK3408 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of dynamic clamp of relay and so on.
FEATURES
• Can be driven by a 4.0 V power source
• Low on-state resistance
RDS(on)1 = 195 mΩ MAX. (VGS = 10.0 V, ID = 0.5 A)
RDS(on)2 = 250 mΩ MAX. (VGS = 4.5 V, ID = 0.5 A)
RDS(on)3 = 260 mΩ MAX. (VGS = 4.0 V, ID = 0.5 A)
• Built-in G-S protection diode against ESD.
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology