Toshiba - 2SK3407 데이터시트 PDF, 핀배열, 회로도

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2SK3407 데이터시트 - Toshiba

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2SK3407

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Silicon N Channel MOS Type (π-MOSV) Field Effect Transistor

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2002

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Switching Regulator Applications

• Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.)
• High forward transfer admittance: |Yfs| = 7.5 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 450 V)
• Enhancement-mode: Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA)

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