MOS Field Effect Transistor
FEATUREs
4.5-V drive available
Low on-state resistance
RDS(on)1=9.0m MAX. (VGS=10V,ID=24A)
Low gate charge
QG= 34 nC TYP. (ID=48A,VDD= 16V, VGS=10V)
Built-in gate protection diode
Surface mount device available