2SK2963(1998) 데이터시트 - Toshiba
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2SK2963
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Toshiba
HIGH SPEED APPLICATIONS
DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS
• 4V Gate Drive
• Low Drain-Source ON Resistance: RDS (ON) = 0.5 Ω (Typ.)
• High Forward Transfer Admittance: |Yfs| = 1.2 S (Typ.)
• Low Leakage Current: IDSS = 100 μA (Max.) (VDS = 100 V)
• Enhancement-Mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L2−π −MOS V) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L2−π−MOS V) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L2−π−MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L2−π−MOSV) ( Rev : 1998 )
Toshiba
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