2SK2912 데이터시트 - Renesas Electronics
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2SK2912
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Renesas Electronics
Silicon N Channel MOS FET
High Speed Power Switching
FEATUREs
• Low on-resistance
RDS= 15 mΩtyp.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
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제조사
Silicon N Channel MOS FET High Speed Power Switching ( Rev : 2006 )
Renesas Electronics
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