2SK1623 데이터시트 - Renesas Electronics
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2SK1623
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Renesas Electronics
Silicon N Channel MOS FET
FEATUREs
• Low on-resistance
• High speed switching
• 4 V gate drive device
Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive
APPLICATION
High speed power switching
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