2SK1365(2006) 데이터시트 - Toshiba
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2SK1365
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Toshiba
Switching Power Supply Applications
● Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.)
● High forward transfer admittance : |Yfs| = 4.0 S (typ.)
● Low leakage current : IDSS = 300 μA (max) (VDS = 800 V)
● Enhancement mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5) ( Rev : 2006 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (π−MOSII.5) ( Rev : 1998 )
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5) ( Rev : 2006 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (π−MOSII.5) ( Rev : 1997 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5) ( Rev : 2006 )
Toshiba
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