2SJ610(2009) 데이터시트 - Toshiba
부품명
2SJ610
Other PDF
PDF
page
6 Pages
File Size
174.7 kB
제조사
Toshiba
Switching Regulator, DC/DC Converter and Motor Drive Applications
• Low drain-source ON-resistance: RDS (ON) = 1.85 Ω (typ.)
• High forward transfer admittance: |Yfs| = 18 S (typ.)
• Low leakage current: IDSS = −100 μA (VDS = −250 V)
• Enhancement mode: Vth = −1.5 to −3.5 V (VDS = 10 V, ID = 1 mA)
부품명
상세내역
PDF
제조사
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π-MOSV) ( Rev : 2009 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π-MOSV) ( Rev : 2002 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV) ( Rev : 2010 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSV) ( Rev : 2008 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π−MOSV) ( Rev : 1998 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSV) ( Rev : 2008 )
Toshiba
Share Link: