2SD803 데이터시트 - Inchange Semiconductor
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2SD803
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Inchange Semiconductor
DESCRIPTION
• Built-in Base-Emitter Shunt Resistors
• High DC current gainhFE = 2000 (Min) @ IC =1 Adc
• Collector-Emitter Breakdown VoltageV(BR)CEO= 100V(Min)
• Wide Area of Safe Operation
APPLICATIONS
• Designed for high power amplifier applications.
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