2SD313 데이터시트 - Jiangsu Changjiang Electronics Technology Co., Ltd
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2SD313
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Jiangsu Changjiang Electronics Technology Co., Ltd
TRANSISTOR (NPN)
FEATURES
● Low Collector-Emitter Saturation Voltage
Vce(sat)=1V(MAX)@IC=2A,IB=0.2A
● DC Current Gain hFE=40~320@IC=1A
● Complementray to PNP 2SB507
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제조사
TO-220-3L Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-220-3L Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-220-3L Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-220-3L Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-220-3L Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-220-3L Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-220-3L Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-220-3L Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-220-3L Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
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