2SD2696(2009) 데이터시트 - ROHM Semiconductor
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2SD2696
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제조사
ROHM Semiconductor
Features
1) The transistor of 400mA class which went only with 2012
size conventionally is attained in 1208 size.
2) Collector saturation voltage is low.
VCE (sat) : max. 300mA at IC = 100mA / IB = 2mA
APPLICATIONs
Switching
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제조사
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NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
NEC => Renesas Technology
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NEC => Renesas Technology
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